Toshiba to Launch 43nm SLC Flash Memory

Toshiba, one of the leading manufacturers of computer NAND flash memory devices, has just announced that it plans to launch a new line-up of 43nm Single-Level Cell (SLC) NAND flash memory solutions. The new devices are slated to debut on the market sometime in the first quarter of 2009.

The new 43nm-built SLC NAND flash memory will be made available in densities ranging from 512MB to 64GB in no less than 16 versions. The new range includes three products with 16GB, 32GB and 64GB capacities, all of which are built using 43nm monolithic 16GB chips, the highest density SLC NAND chips available. The new devices are set to hit the market in Q1 2009, while lower-capacity products will be made available in the third quarter of next year.

The company has specifically built the new devices to meet the requirements of different applications. Its product offering delivers support for mobile phones, office automation equipment and servers, providing increased read and write speeds as well as high levels of reliability.

Toshiba has been promoting the expansion of the NAND flash memory market by accelerating development of high density MLC chips that can be used for high capacity data storage in memory cards, MP3 players and other storage devices. SLC chips haven't been adopted by Toshiba because of the limitations of its 56nm and 70nm process technologies. However, the new 43nm process technology allows the company to expand its wide range of advanced SLC flash memories designed for high-performance storage applications.

Toshiba is one of the leading providers of storage-based and consumer electronics products, which, aside from its range of magnetic hard drives, has also introduced a line of solid state drives for consumers that require a higher-performance storage solution. With the introduction of its 43nm SLC flash memory line-up, the company plans to expand its selection of high-value added products for a wide range of embedded applications.